SIS496EDNT-T1-GE3
MOSFET N-CH 30V 50A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS496EDNT-T1-GE3 is an N-Channel MOSFET designed for demanding applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 50A at 25°C (Tc), with a maximum power dissipation of 52W (Tc). The low on-resistance of 4.8mOhm at 20A and 10V Vgs, coupled with a gate charge of 45nC at 10V, ensures efficient switching performance. The input capacitance (Ciss) is rated at a maximum of 1515pF at 15V. Operating over a wide temperature range of -55°C to 150°C (TJ), this MOSFET is housed in a surface-mount PowerPAK® 1212-8 package, supplied on tape and reel. It is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1515 pF @ 15 V |
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