SIS488DN-T1-GE3
MOSFET N-CH 40V 40A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIS488DN-T1-GE3 is a TrenchFET® series N-Channel MOSFET designed for high-efficiency power management applications. This component features a 40V drain-source voltage and a continuous drain current capability of 40A at 25°C (Tc), with a maximum Rds(on) of 5.5mOhm at 20A and 10V Vgs. The device offers excellent thermal performance, with a maximum power dissipation of 52W (Tc) and 3.7W (Ta), housed in a compact PowerPAK® 1212-8 surface-mount package. Key electrical characteristics include a gate charge of 32nC (max) at 10V Vgs and an input capacitance (Ciss) of 1330pF (max) at 20V Vds. The SIS488DN-T1-GE3 is suitable for automotive, industrial power, and consumer electronics markets where robust performance and efficient power conversion are critical. It operates across a temperature range of -55°C to 150°C (TJ) and supports gate drive voltages from 4.5V to 10V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 20 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
