SIS478DN-T1-GE3
MOSFET N-CH 30V 12A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SIS478DN-T1-GE3 is an N-channel power MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The SIS478DN-T1-GE3 offers a maximum on-resistance (Rds On) of 20mOhm at 8A and 10V gate-source voltage. With a maximum power dissipation of 15.6W (Tc), it is suitable for high-power density designs. Key characteristics include a gate charge (Qg) of 10.5 nC maximum at 10V and input capacitance (Ciss) of 398 pF maximum at 15V. The component is housed in a PowerPAK® 1212-8 surface mount package, supplied on tape and reel. This MOSFET is utilized in industries such as automotive, industrial power, and consumer electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 15.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 398 pF @ 15 V |
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