SIS468DN-T1-GE3
MOSFET N-CH 80V 30A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIS468DN-T1-GE3, an N-Channel TrenchFET® MOSFET, is designed for demanding power applications. This component features a 80V drain-to-source voltage and supports a continuous drain current of 30A at 25°C (Tc). Its low on-resistance, specified at a maximum of 19.5mOhm at 10A and 10V, is achievable with gate drive voltages from 4.5V to 10V. The device boasts a low gate charge of 28nC (max) at 10V and an input capacitance of 780pF (max) at 40V. Power dissipation is rated at 3.7W (Ta) and 52W (Tc). Packaged in the PowerPAK® 1212-8 for efficient thermal management, the SIS468DN-T1-GE3 is suitable for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in various industries including automotive and industrial power systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 40 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
