SIS452DN-T1-GE3
MOSFET N-CH 12V 35A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS452DN-T1-GE3 is a 12 V N-Channel TrenchFET® Power MOSFET in a PowerPAK® 1212-8 package. This device offers a continuous drain current of 35 A at 25°C (Tc) and a maximum on-resistance of 3.25 mOhms at 20 A and 10 V. With a gate charge of 41 nC at 10 V and input capacitance of 1700 pF at 6 V, the SIS452DN-T1-GE3 is suitable for high-efficiency power switching applications. It operates across a temperature range of -55°C to 150°C (TJ) and supports drive voltages from 4.5 V to 10 V, with a maximum gate-source voltage of ±20V. This component is utilized in industries such as automotive and industrial power management. The Vishay Siliconix SIS452DN-T1-GE3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.25mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 6 V |