SIS448DN-T1-GE3
MOSFET N-CH 30V 35A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS448DN-T1-GE3 is a N-Channel Power MOSFET from the TrenchFET® series. This device offers a 30V drain-source breakdown voltage and a continuous drain current of 35A at 25°C (Tc). Key performance characteristics include a maximum Rds(on) of 5.6mOhm at 10A and 10V. The MOSFET features a low gate charge of 38 nC at 10V and an input capacitance of 1575 pF at 15V. It is housed in a surface mount PowerPAK® 1212-8 package, designed for efficient thermal management with a power dissipation of 52W (Tc). This component is suitable for applications in automotive and industrial power management systems. It operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1575 pF @ 15 V |
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