SIS439DNT-T1-GE3
MOSFET P-CH 30V 50A PPAK1212-8SManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIS439DNT-T1-GE3 is a P-Channel MOSFET with a 30V drain-to-source voltage. This component offers a continuous drain current of 50A at 25°C (Tc) and features a low on-resistance of 11mOhm at 14A and 10V. The device is packaged in a PowerPAK® 1212-8S surface-mount configuration and operates across a temperature range of -50°C to 150°C (TJ). Key electrical characteristics include a gate charge of 68nC at 10V and an input capacitance of 2135pF at 15V. Power dissipation capabilities are rated at 3.8W (Ta) and 52.1W (Tc). This MOSFET is suitable for applications in power management, automotive systems, and industrial power supplies.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52.1W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2135 pF @ 15 V |
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