SIS436DN-T1-GE3
MOSFET N-CH 25V 16A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS436DN-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 25V drain-source voltage rating and a continuous drain current capability of 16A (Tc) at 25°C. The SIS436DN-T1-GE3 offers a low on-resistance of 10.5mOhm maximum at 10A and 10V Vgs. It is housed in a PowerPAK® 1212-8 surface mount package. Key parameters include a maximum gate charge of 22 nC at 10V and input capacitance of 855 pF maximum at 10V. Power dissipation is rated at 3.5W (Ta) and 27.7W (Tc). This component is suitable for applications in the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 27.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 855 pF @ 10 V |