SIS430DN-T1-GE3
MOSFET N-CH 25V 35A PPAK 1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SIS430DN-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications requiring high current density and low on-resistance. This device features a 25V drain-source breakdown voltage and a continuous drain current capability of 35A at a case temperature of 25°C. The optimized PowerPAK® 1212-8 package provides excellent thermal performance, with a maximum power dissipation of 52W at 25°C case temperature. Key electrical characteristics include a maximum Rds(on) of 5.1mOhm at 20A and 10V Vgs, and a gate charge of 40nC at 10V Vgs. The SIS430DN-T1-GE3 is suitable for use in power management, automotive, and industrial power conversion systems. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 12.5 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
