SIS426DN-T1-GE3
MOSFET N-CH 20V 35A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS426DN-T1-GE3 is an N-Channel Power MOSFET featuring the TrenchFET® technology for low on-resistance and high efficiency. This device offers a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 35A at 25°C (Tc). The Rds(on) is specified at a maximum of 4.5mOhm at 10A, 10V, with a drive voltage range of 4.5V to 10V. Gate charge (Qg) is 42 nC maximum at 10V, and input capacitance (Ciss) is 1570 pF maximum at 10V. The SIS426DN-T1-GE3 is housed in a PowerPAK® 1212-8 surface-mount package, providing excellent thermal performance with a maximum power dissipation of 52W at 25°C (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in automotive, industrial power, and high-density power conversion. The device is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 10 V |