SIS414DN-T1-GE3
MOSFET N-CH 30V 20A PPAK1212-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIS414DN-T1-GE3 is an N-Channel MOSFET from the TrenchFET® series, packaged in the PowerPAK® 1212-8. This component features a 30V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 20A at 25°C (Tc). The on-resistance (Rds On) is specified as a maximum of 16mOhm at 10A and 4.5V gate-source voltage. Drive voltages for optimal performance are between 2.5V and 4.5V. The device offers a maximum power dissipation of 3.4W ambient (Ta) and 31W at 25°C (Tc). Key electrical characteristics include a maximum gate charge (Qg) of 33nC at 10V and a maximum input capacitance (Ciss) of 795pF at 15V. It operates within an extended temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for demanding applications in the automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.4W (Ta), 31W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 795 pF @ 15 V |
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