SIS176LDN-T1-GE3
N-CHANNEL 70 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 70 V 12.9A (Ta), 42.3A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.9A (Ta), 42.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.9mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 39W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 3.3V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 70 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1660 pF @ 35 V |
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