SIS110DN-T1-GE3
MOSFET N-CH 100V 5.2A/14.2A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 5.2A (Ta), 14.2A (Tc) 3.2W (Ta), 24W (Tc) Surface Mount PowerPAK® 1212-8
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® 1212-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 14.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 24W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 50 V |
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