SIRS700DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIRS700DP-T1-RE3 is an N-Channel Power MOSFET from the TrenchFET® Gen IV series. This surface mount device in a PowerPAK® SO-8 package offers a Drain-to-Source Voltage (Vdss) of 100V. It features a maximum continuous drain current of 30A at 25°C ambient and 127A at 25°C case temperature. The device exhibits a low on-resistance of 3.5mOhm at 20A and 10V. Maximum power dissipation is rated at 7.4W (Ta) and 132W (Tc). Gate charge (Qg) is specified at 130 nC maximum at 10V, with input capacitance (Ciss) at 5950 pF maximum at 50V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 127A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.4W (Ta),132W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5950 pF @ 50 V |
Request a Quote
Clients Also Buy
SISA24DN-T1-GE3
MOSFET N-CH 25V 60A PPAK1212-8
SISS06DN-T1-GE3
MOSFET N-CH 30V 47.6/172.6A PPAK
SIRA58ADP-T1-RE3
MOSFET N-CH 40V 32.3A/109A PPAK
