SIRS5800DP-T1-GE3
N-CHANNEL 80 V (D-S) MOSFET POWEManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIRS5800DP-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for demanding power applications. This device offers a Vdss of 80V and boasts a continuous drain current capability of 46A at 25°C ambient and 265A at 25°C case temperature. With a low Rds(on) of 1.8mOhm maximum at 20A and 10V, it minimizes conduction losses. The PowerPAK® SO-8 package provides excellent thermal performance, supporting a maximum power dissipation of 7.4W (Ta) and 240W (Tc). Key parameters include a gate charge of 122 nC (max) at 10V and input capacitance (Ciss) of 6190 pF (max) at 40V. This component is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 265A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.4W (Ta), 240W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6190 pF @ 40 V |
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