SIRS5700DP-T1-RE3
N-CHANNEL MOSFETManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® Gen V SIRS5700DP-T1-RE3 is an N-channel power MOSFET designed for demanding applications. This device features a 150 V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 25 A at 25°C ambient and 144 A at 25°C case temperature. With a low on-resistance of 5.6 mOhm maximum at 20 A and 10 V gate-source voltage, it offers efficient power handling. The SIRS5700DP-T1-RE3 exhibits a maximum power dissipation of 8.3 W (ambient) and 278 W (case). Key parameters include a gate charge (Qg) of 110 nC maximum at 10 V and input capacitance (Ciss) of 5455 pF maximum at 75 V. It operates across a temperature range of -55°C to 150°C and is housed in a surface-mount PowerPAK® SO-8 package. This component is suitable for use in automotive and industrial power conversion systems.
Additional Information
Series: TrenchFET® Gen VRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 144A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 278W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5455 pF @ 75 V |
| Qualification | - |
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