SIRS5100DP-T1-GE3
N-CHANNEL 100 V (D-S) MOSFET POWManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIRS5100DP-T1-GE3 is an N-Channel TrenchFET® Power MOSFET designed for high-efficiency power conversion applications. This device offers a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 39 A at 25°C ambient temperature, scaling to 225 A under 25°C case temperature. With a low on-resistance (Rds On) of 2.5 mOhm at 20 A and 10 V, it minimizes conduction losses. The MOSFET features a maximum power dissipation of 7.4 W (Ta) and 240 W (Tc), supporting demanding thermal environments. Key parameters include a gate charge (Qg) of 102 nC at 10 V and input capacitance (Ciss) of 5400 pF at 50 V. The SIRS5100DP-T1-GE3 is housed in a PowerPAK® SO-8 surface-mount package, suitable for use in automotive and industrial power management systems. Operating temperature ranges from -55°C to 150°C. Drive voltages for optimal Rds On are 7.5 V and 10 V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 225A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 7.4W (Ta), 240W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 50 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
