SIRA90ADP-T1-GE3
MOSFET N-CH 30V 71A/334A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIRA90ADP-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 71A at 25°C ambient and 334A at 25°C case temperature. The low on-resistance of 0.78mOhm at 20A and 10V ensures minimal conduction losses. With a maximum power dissipation of 6.3W (ambient) and 104W (case), it is suitable for demanding thermal environments. The device is housed in a PowerPAK® SO-8 package, facilitating efficient heat transfer through surface mounting. Key parameters include a gate charge (Qg) of 195 nC (max) and input capacitance (Ciss) of 9120 pF (max). Operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 71A (Ta), 334A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.78mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.3W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9120 pF @ 15 V |
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