SIRA54DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel SIRA54DP-T1-GE3 is a 40V device from the TrenchFET® Gen IV series. This surface mount PowerPAK® SO-8 component features a continuous drain current capability of 60A (Tc) and a maximum power dissipation of 36.7W (Tc). With a low on-resistance of 2.35mOhm @ 15A, 10V, this MOSFET is designed for high-efficiency applications. Key electrical parameters include a gate charge (Qg) of 48 nC @ 4.5 V and an input capacitance (Ciss) of 5300 pF @ 20 V. Operating across a temperature range of -55°C to 150°C (TJ), it is suitable for demanding power management solutions in sectors such as automotive and industrial automation. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.35mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36.7W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 20 V |
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