SIRA52DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIRA52DP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 40V drain-source voltage and a continuous drain current capability of 60A at 25°C (Tc), with a maximum power dissipation of 48W (Tc). The device is housed in a PowerPAK® SO-8 surface-mount package, optimized for thermal performance. With a low on-resistance of 1.7mOhm at 15A and 10V, and a gate charge of 150 nC at 10V, it facilitates efficient switching. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in automotive, industrial, and power supply applications where robust performance and thermal management are critical.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7150 pF @ 20 V |
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