SIRA50DP-T1-RE3
MOSFET N-CH 40V 62.5A/100A PPAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix presents the SIRA50DP-T1-RE3, an N-Channel Power MOSFET from the TrenchFET® Gen IV series. This surface mount component is housed in a PowerPAK® SO-8 package, optimized for high-density power applications. It features a 40V drain-source breakdown voltage and a continuous drain current capability of 62.5A at ambient temperature and 100A at case temperature.
The SIRA50DP-T1-RE3 offers a maximum on-resistance of 1mOhm at 20A and 10V gate-source voltage, ensuring low conduction losses. Its design supports a wide gate drive voltage range from 4.5V to 10V. Key electrical parameters include a maximum gate charge of 194 nC at 10V and input capacitance of 8445 pF at 20V.
With a maximum power dissipation of 6.25W at ambient and 100W at case temperature, and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for demanding environments. It is commonly utilized in power management, automotive, and industrial applications requiring efficient power switching. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62.5A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 194 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8445 pF @ 20 V |
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