SIRA34DP-T1-GE3
MOSFET N-CH 30V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIRA34DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This device features a 30V Vds rating and a continuous drain current capability of 40A at 25°C (Tc). With a maximum Rds(on) of 6.7mOhm at 10A and 10V, and a gate drive range of 4.5V to 10V, it offers low conduction losses. The MOSFET is housed in a PowerPAK® SO-8 package for efficient thermal management, providing 31.25W of power dissipation at 25°C (Tc). Key electrical parameters include a maximum gate charge of 25 nC at 10V and an input capacitance of 1100 pF at 15V. This component is suitable for applications in automotive, industrial, and power management systems. Operating temperature range is -55°C to 150°C (TJ). The Vishay Siliconix SIRA34DP-T1-GE3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 31.25W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +20V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 15 V |
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