SIR892DP-T1-GE3
MOSFET N-CH 25V 50A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR892DP-T1-GE3 is an N-Channel TrenchFET® MOSFET designed for high-performance power management applications. This component features a 25V drain-source voltage and a continuous drain current of 50A at 25°C (Tc). Its low on-resistance is specified as a maximum of 3.2mOhm at 10A and 10V. The device offers a gate charge (Qg) of 60 nC maximum at 10V and input capacitance (Ciss) of 2645 pF maximum at 10V. Packaged in a PowerPAK® SO-8, it supports surface mounting and operates across a temperature range of -55°C to 150°C. Power dissipation capabilities include 5W (Ta) and 50W (Tc). This MOSFET is suitable for use in automotive, industrial, and consumer electronics sectors demanding efficient power switching. The part is supplied in a Tape & Reel (TR) configuration.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2645 pF @ 10 V |