SIR890DP-T1-GE3
MOSFET N-CH 20V 50A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR890DP-T1-GE3, a TrenchFET® series N-Channel Power MOSFET, offers 20V drain-source breakdown voltage and 50A continuous drain current at 25°C (Tc). This device features a low on-resistance of 2.9mOhm maximum at 10A, 10V, enabled by its advanced trench technology. Drive voltages range from 4.5V to 10V. Key parameters include a gate charge (Qg) of 60nC maximum at 10V and input capacitance (Ciss) of 2747pF maximum at 10V. The SIR890DP-T1-GE3 is housed in a PowerPAK® SO-8 surface mount package, designed for efficient thermal management with a power dissipation of 5W (Ta) and 50W (Tc). Operating temperature is specified from -55°C to 150°C (TJ). This component is suitable for applications in automotive, industrial, and power supply systems where high current density and low conduction losses are critical. Supplied on tape and reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2747 pF @ 10 V |