SIR882DP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SIR882DP-T1-GE3 is a trench MOSFET, N-channel device featuring 100V drain-source voltage and 60A continuous drain current at 25°C (Tc). This PowerPAK® SO-8 packaged component offers a low on-resistance of 8.7mOhm maximum at 20A and 10V Vgs. With a maximum gate charge of 58 nC at 10V and input capacitance of 1930 pF at 50V, it is suitable for applications requiring efficient switching. The device supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. Its power dissipation capabilities are 5.4W (Ta) and 83W (Tc). Operating across a temperature range of -55°C to 150°C, this MOSFET is commonly utilized in power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1930 pF @ 50 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
