SIR880DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel SIR880DP-T1-GE3. This TrenchFET® series power MOSFET offers an 80V drain-to-source voltage and a continuous drain current of 60A at 25°C (Tc). Featuring a low on-resistance of 5.9mOhm maximum at 20A and 10V, it is designed for efficient power conversion. The device utilizes a N-Channel Metal Oxide technology and is housed in a PowerPAK® SO-8 surface mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 74nC maximum at 10V and input capacitance (Ciss) of 2440pF maximum at 40V. Power dissipation is rated at 6.25W (Ta) and 104W (Tc). The operating temperature range is -55°C to 150°C (TJ). This component finds application in power management, automotive, and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2440 pF @ 40 V |
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