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SIR880ADP-T1-GE3

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SIR880ADP-T1-GE3

MOSFET N-CH 80V 60A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix TrenchFET® SIR880ADP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion. This device features an 80V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 60A at 25°C (Tc). The low on-resistance (Rds On) of 6.3mOhm at 20A and 10V gate-source voltage (Vgs) minimizes conduction losses. It supports a wide gate drive voltage range from 4.5V to 10V. The device boasts a maximum power dissipation of 83W (Tc) and 5.4W (Ta), facilitated by its PowerPAK® SO-8 surface-mount package. Key parameters include a gate charge (Qg) of 72 nC at 10V and input capacitance (Ciss) of 2289 pF at 40V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in demanding applications across automotive, industrial, and power supply sectors.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs6.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2289 pF @ 40 V

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