SIR878ADP-T1-GE3
MOSFET N-CH 100V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR878ADP-T1-GE3 is an N-Channel TrenchFET® power MOSFET designed for high-efficiency power switching applications. This component features a 100 V drain-source breakdown voltage and a continuous drain current capability of 40 A at 25°C (Tc). The low Rds(on) of 14 mOhm at 15 A and 10 V Vgs ensures minimal conduction losses. With a gate charge (Qg) of 42 nC at 10 V, it supports fast switching speeds. The PowerPAK® SO-8 package offers excellent thermal performance, dissipating up to 44.5 W at 25°C (Tc). This MOSFET is suitable for various industrial applications including power supplies, motor control, and DC-DC converters. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 44.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1275 pF @ 50 V |