SIR876DP-T1-GE3
MOSFET N-CH 100V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR876DP-T1-GE3 is an N-channel Power MOSFET in a PowerPAK® SO-8 package. This device features a 100V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 40A at 25°C (Tc). With a low on-resistance (Rds(on)) of 10.8mOhm maximum at 20A and 10V Vgs, it is designed for efficient power switching applications. The MOSFET exhibits a gate charge (Qg) of 48 nC maximum at 10V Vgs and an input capacitance (Ciss) of 1640 pF maximum at 50V Vds. The SIR876DP-T1-GE3 offers a maximum power dissipation of 5W (Ta) or 62.5W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for use in industrial and automotive power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 50 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
