SIR876ADP-T1-GE3
MOSFET N-CH 100V 40A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR876ADP-T1-GE3 is an N-channel MOSFET designed for high-efficiency power switching applications. This component offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 40A at 25°C (Tc). Featuring an Rds(on) as low as 10.8mOhm at 20A and 10V (Vgs), it minimizes conduction losses. The device is housed in a PowerPAK® SO-8 surface mount package, facilitating compact board designs. Key electrical parameters include a gate charge (Qg) of 49 nC maximum at 10V (Vgs) and an input capacitance (Ciss) of 1630 pF maximum at 50V (Vds). With a maximum power dissipation of 62.5W at 25°C (Tc), it is suitable for demanding industrial, automotive, and consumer electronics power management solutions. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 50 V |
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