SIR874DP-T1-GE3
MOSFET N-CH 25V 20A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR874DP-T1-GE3, an N-Channel Power MOSFET from the TrenchFET® series, offers a 25V drain-source voltage and 20A continuous drain current at 25°C (Tc). This device features a low on-resistance of 9.4mOhm maximum at 10A and 10V Vgs, with drive voltages specified between 4.5V and 10V. The SIR874DP-T1-GE3 utilizes advanced MOSFET technology and is housed in a PowerPAK® SO-8 surface-mount package. Key electrical characteristics include a maximum gate charge (Qg) of 27 nC at 10V and a maximum input capacitance (Ciss) of 985 pF at 15V. Power dissipation is rated at 3.9W (Ta) and 29.8W (Tc). This component is suitable for applications in automotive, industrial power supplies, and high-efficiency power conversion systems. It operates within a temperature range of -55°C to 150°C (TJ). The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 29.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 985 pF @ 15 V |