SIR873DP-T1-GE3
MOSFET P-CH 150V 37A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® Gen IV P-Channel Power MOSFET, part number SIR873DP-T1-GE3. This device features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 37A at 25°C (Tc). The SIR873DP-T1-GE3 offers a maximum on-resistance (Rds On) of 47.5mOhm at 10A and 10V. It is designed with a P-Channel MOSFET technology and is housed in a PowerPAK® SO-8 surface mount package, supplied on tape and reel. Key characteristics include a gate charge (Qg) of 48nC at 10V and an input capacitance (Ciss) of 1805pF at 75V. The maximum power dissipation (Pd) is 104W (Tc), and it operates within a temperature range of -55°C to 150°C (TJ). This component is utilized in power management, automotive, and industrial applications.
Additional Information
Series: TrenchFET® Gen IVRoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 47.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1805 pF @ 75 V |
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