SIR872DP-T1-GE3
MOSFET N-CH 150V 53.7A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR872DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series, designed for high-efficiency power switching applications. This device features a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 53.7A at 25°C (Tc). The MOSFET delivers a low on-resistance (Rds On) of 18mOhm maximum at 20A and 10V gate drive. With a maximum gate charge (Qg) of 64 nC at 10V, it is optimized for fast switching speeds. The PowerPAK® SO-8 package provides excellent thermal performance, with a maximum power dissipation of 104W at 25°C (Tc). Operating across a temperature range of -55°C to 150°C (TJ), this component is suitable for use in industrial power supplies, automotive systems, and power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 75 V |
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