SIR872ADP-T1-RE3
MOSFET N-CH 150V 53.7A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR872ADP-T1-RE3 is an N-channel Power MOSFET designed for efficient power conversion. This device features a 150V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 53.7A at 25°C (Tc), with a maximum power dissipation of 104W (Tc). The low on-resistance (Rds On) of 18mOhm is achieved at 20A and 10V Vgs. Key parameters include a gate charge (Qg) of 47 nC at 10V and input capacitance (Ciss) of 1286 pF at 75V. The device utilizes Metal Oxide technology and is housed in a PowerPAK® SO-8 surface-mount package, supplied on tape and reel. It operates within a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. This MOSFET is widely employed in industrial power supplies, automotive applications, and high-power switching circuits.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1286 pF @ 75 V |
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