SIR871DP-T1-GE3
MOSFET P-CH 100V 48A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR871DP-T1-GE3 is a P-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 48A at 25°C (Tc), with a maximum power dissipation of 89W (Tc). The Rds On is specified at a maximum of 20mOhm at 20A and 10V Vgs. Key characteristics include a low gate charge (Qg) of 90 nC at 10V and an input capacitance (Ciss) of 3395 pF at 50V. The SIR871DP-T1-GE3 utilizes a surface mount PowerPAK® SO-8 package, enabling efficient thermal management. This component is suitable for use in industrial and automotive sectors. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3395 pF @ 50 V |
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