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SIR870DP-T1-GE3

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SIR870DP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix SIR870DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 100V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 60A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 6mOhm at 20A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 84 nC maximum at 10V Vgs and input capacitance (Ciss) of 2840 pF maximum at 50V Vds, this MOSFET is designed for high-efficiency switching applications. It is available in a PowerPAK® SO-8 surface mount package and operates across a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 6.25W (Ta) and 104W (Tc). This component is suitable for use in industrial automation, power supplies, and automotive applications.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2840 pF @ 50 V

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