SIR870DP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR870DP-T1-GE3 is an N-Channel Power MOSFET from the TrenchFET® series. This component features a 100V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 60A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 6mOhm at 20A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 84 nC maximum at 10V Vgs and input capacitance (Ciss) of 2840 pF maximum at 50V Vds, this MOSFET is designed for high-efficiency switching applications. It is available in a PowerPAK® SO-8 surface mount package and operates across a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 6.25W (Ta) and 104W (Tc). This component is suitable for use in industrial automation, power supplies, and automotive applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 50 V |
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