SIR870ADP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Vishay Siliconix SIR870ADP-T1-GE3 is an N-Channel Power MOSFET, part of the TrenchFET® series. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (T<sub>C</sub>). It offers a low on-resistance of 6.6mOhm maximum at 20A and 10V V<sub>GS</sub>. The SIR870ADP-T1-GE3 is housed in a PowerPAK® SO-8 surface-mount package, designed for efficient thermal management with a power dissipation of 104W at 25°C (T<sub>C</sub>). Gate drive characteristics include a 10V maximum recommended gate-source voltage and a 4.5V to 10V drive voltage range for optimal Rds(on). Key parameters include a maximum gate charge of 80 nC at 10V and input capacitance (C<sub>iss</sub>) of 2866 pF maximum at 50V. This device is suitable for applications in power supply, motor control, and industrial power systems. It operates across a temperature range of -55°C to 150°C (T<sub>J</sub>).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2866 pF @ 50 V |
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