SIR866DP-T1-GE3
MOSFET N-CH 20V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR866DP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 20V drain-source voltage rating and a continuous drain current capability of 60A at 25°C (Tc). The SIR866DP-T1-GE3 boasts a low on-resistance of 1.9mOhm maximum at 20A and 10V Vgs, enabled by its advanced TrenchFET technology. It is housed in a PowerPAK® SO-8 package, facilitating efficient thermal management with a maximum power dissipation of 83W at 25°C (Tc). Key parameters include a gate charge (Qg) of 107nC (max) at 10V and input capacitance (Ciss) of 4730pF (max) at 10V. This component is suitable for demanding applications in automotive, consumer electronics, and industrial power systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4730 pF @ 10 V |
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