SIR850DP-T1-GE3
MOSFET N-CH 25V 30A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix TrenchFET® SIR850DP-T1-GE3 is a N-Channel Power MOSFET, engineered for demanding applications. This device features a 25V drain-source voltage rating and a continuous drain current capability of 30A (Tc). The SIR850DP-T1-GE3 offers a low on-resistance of 7mOhm maximum at 20A and 10V Vgs, facilitated by a 4.5V to 10V drive voltage range. It is housed in a PowerPAK® SO-8 package, suitable for surface mounting. Key electrical parameters include a gate charge of 30 nC maximum at 10V Vgs and input capacitance of 1120 pF maximum at 15V Vds. Maximum power dissipation is rated at 4.8W (Ta) and 41.7W (Tc). This component is utilized in industries such as automotive and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 41.7W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 15 V |
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