SIR846ADP-T1-RE3
MOSFET N-CH 100V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR846ADP-T1-RE3 is an N-Channel Power MOSFET featuring 100V Vds and 60A continuous drain current capability at 25°C (Tc). This TrenchFET® series component offers a low Rds(on) of 7.8mOhm maximum at 20A and 10V Vgs. The device is housed in a PowerPAK® SO-8 surface mount package, providing a thermal dissipation of 83W (Tc). Key electrical parameters include a gate charge of 66 nC (max) at 10V Vgs and input capacitance of 2350 pF (max) at 50V Vds. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in automotive and industrial power switching, motor control, and power supply designs. It is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 50 V |