SIR846ADP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR846ADP-T1-GE3 TrenchFET® N-Channel Power MOSFET. This component features a 100V drain-to-source voltage (Vdss) and a continuous drain current of 60A at 25°C (Tc). The Rds On is specified at a maximum of 7.8mOhm at 20A and 10V gate-source voltage. It offers a maximum gate charge (Qg) of 66 nC at 10V and input capacitance (Ciss) of 2350 pF at 50V. Power dissipation is rated at 5.4W (Ta) and 83W (Tc). The device utilizes a Surface Mount PowerPAK® SO-8 package and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for power management applications in automotive, industrial, and computing sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 50 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
