SIR840DP-T1-GE3
MOSFET N-CH 30V PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIR840DP-T1-GE3 is an N-Channel, 30V power MOSFET designed for high-efficiency power conversion applications. This component utilizes Vishay's advanced trench MOSFET technology, offering low on-resistance and fast switching characteristics. Packaged in the compact PowerPAK® SO-8, it provides excellent thermal performance for demanding applications. The SIR840DP-T1-GE3 is suitable for use in automotive, industrial, and consumer electronics where efficient power management is critical. Its robust construction and reliable performance make it a key component for power supply units, DC-DC converters, and motor control systems. The device operates over a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PowerPAK® SO-8 |
| Drain to Source Voltage (Vdss) | 30 V |
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