SIR826DP-T1-RE3
MOSFET N-CH 80V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR826DP-T1-RE3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features an 80V drain-source voltage (Vdss) and a continuous drain current (Id) rating of 60A at 25°C (Tc), with a maximum power dissipation of 104W (Tc). The low on-resistance (Rds On) of 4.8mOhm at 20A and 10V gate-source voltage (Vgs) is achieved through Vishay's TrenchFET® technology, minimizing conduction losses. The device is supplied in a PowerPAK® SO-8 package for efficient thermal management and ease of surface mounting. Key parameters include a gate charge (Qg) of 90 nC (max) at 10V Vgs and input capacitance (Ciss) of 2900 pF (max) at 40V Vds. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for demanding applications in automotive, industrial, and server power supply designs.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 40 V |
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