SIR826DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR826DP-T1-GE3 is an N-Channel Power MOSFET in the TrenchFET® series, housed in a PowerPAK® SO-8 package. This device features a 80V Drain-Source Voltage (Vdss) and a continuous drain current of 60A (Tc) at 25°C. The low on-resistance of 4.8mOhm is achieved at 20A and 10V Vgs, with drive voltages available from 4.5V to 10V. Maximum gate charge is 90 nC at 10V, and input capacitance (Ciss) is 2900 pF at 40V. Power dissipation is rated at 6.25W (Ta) and 104W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in automotive and industrial power control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 40 V |
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