SIR826ADP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix SIR826ADP-T1-GE3 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features an 80V drain-source voltage and a continuous drain current capability of 60A at 25°C (Tc). Optimized for low on-resistance, it achieves a maximum Rds(on) of 5.5 mOhm at 20A and 10V Vgs. The TrenchFET® series technology contributes to reduced gate charge (Qg) of 86 nC (max) and input capacitance (Ciss) of 2800 pF (max), facilitating faster switching speeds. Maximum power dissipation is rated at 104W (Tc) and 6.25W (Ta). The SIR826ADP-T1-GE3 is housed in a PowerPAK® SO-8 package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C (TJ). This component finds utility in industries such as automotive, industrial power supplies, and power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 40 V |
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