SIR814DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR814DP-T1-GE3, an N-Channel Power MOSFET from the TrenchFET® series, offers robust performance with a 40V drain-source voltage and a continuous drain current capability of 60A at 25°C (Tc). This device features a low on-resistance of 2.1mOhm maximum at 20A and 10V, coupled with a gate charge of 86nC maximum at 10V. The input capacitance (Ciss) is 3800pF maximum at 20V. Engineered for demanding applications, it dissipates up to 104W (Tc) or 6.25W (Ta) and operates reliably within a temperature range of -55°C to 150°C. The SIR814DP-T1-GE3 is housed in a surface mount PowerPAK® SO-8 package and is supplied on tape and reel. This component is commonly utilized in power management, automotive, and industrial power supply applications.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 20 V |
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