SIR812DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix SIR812DP-T1-GE3 TrenchFET® N-Channel Power MOSFET. This device features a 30V drain-to-source voltage and a continuous drain current of 60A at 25°C (Tc). With a low on-resistance of 1.45mOhm maximum at 20A and 10V Vgs, it offers efficient power handling. The MOSFET is packaged in a PowerPAK® SO-8, suitable for surface mounting. Key parameters include a gate charge (Qg) of 335 nC (max) at 10V and input capacitance (Ciss) of 10240 pF (max) at 15V. Maximum power dissipation is rated at 6.25W (Ta) and 104W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management applications across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.45mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 335 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10240 pF @ 15 V |
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