SIR808DP-T1-GE3
MOSFET N-CH 25V 20A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel SIR808DP-T1-GE3. This TrenchFET® series device features a 25V drain-to-source voltage and a continuous drain current of 20A (Tc). With a maximum Rds(On) of 8.9mOhm at 17A and 10V Vgs, it offers efficient power handling. The N-Channel MOSFET is presented in a PowerPAK® SO-8 surface mount package, supplied on tape and reel. Key parameters include a gate charge of 22.8 nC at 10V and an input capacitance of 815 pF at 12.5V. This component is suitable for applications requiring high power density in automotive and industrial power management systems. Its operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29.8W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 815 pF @ 12.5 V |
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