SIR804DP-T1-GE3
MOSFET N-CH 100V 60A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix SIR804DP-T1-GE3 is a N-Channel Power MOSFET featuring the TrenchFET® technology. This component offers a 100V drain-to-source voltage (Vdss) and a continuous drain current capability of 60A at 25°C (Tc). The device boasts a low on-resistance (Rds On) of 7.2mOhm at 20A and 10V, with a gate drive range of 4.5V to 10V. Key parameters include a maximum gate charge (Qg) of 76 nC at 10V and an input capacitance (Ciss) of 2450 pF at 50V. Housed in a PowerPAK® SO-8 surface mount package, the SIR804DP-T1-GE3 provides high power dissipation, rated at 104W (Tc) and 6.25W (Ta). It operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, industrial motor control, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 50 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
