SIR802DP-T1-GE3
MOSFET N-CH 20V 30A PPAK SO-8Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix TrenchFET® SIR802DP-T1-GE3 is an N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C (Tc). The low on-resistance of 5 mOhm at 10A and 10V gate-source voltage is achieved through advanced TrenchFET® technology. The device is housed in a PowerPAK® SO-8 package, facilitating efficient thermal management with a maximum power dissipation of 27.7W (Tc). Key electrical parameters include a gate charge of 32 nC maximum at 10V and input capacitance of 1785 pF maximum at 10V. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for use in high-efficiency power conversion, automotive systems, and industrial power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.6W (Ta), 27.7W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1785 pF @ 10 V |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
